? 2003 ixys all rights reserved symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c48a i c90 t c = 90 c24a i cm t c = 25 c, 1 ms 96 a ssoa v ge = 15 v, t j = 125 c, r g = 33 ? i cm = 48 a (rbsoa) clamped inductive load, v cc = 0.8 v ces @ 0.8 v ces t sc v ge = 15 v, v ce = 360 v, t j = 125 c 10 s (scsoa) r g = 33 ?, non repetitive p c t c = 25 c 150 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque 1.13/10 nm/lb.in. weight 6g maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s features z international standard packages z guaranteed short circuit soa capability z low v ce(sat) - for low on-state conduction losses z high current handling capability z mos gate turn-on - drive simplicity z fast fall time for switching speeds up to 50 khz applications z ac and dc motor speed control z uninterruptible power supplies (ups) z welding advantages z easy to mount with 1 screw (to-247) (isolated mounting screw hole) z high power density ds98768b(02/03) g = gate e = emitter tab = collector to-247 ad (ixsh) (tab) to-268 (d3) ( ixst) (tab) g e high speed igbt short circuit soa capability v ces = 600 v i c25 = 48a v ce(sat) = 2.5 v t fi typ = 170 ns ixsh 24n60b ixst 24n60b ixsh 24n60bd1 ixst 24n60bd1 c e g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 600 v v ge(th) i c = 1.5 ma, v ce = v ge 3.5 6.5 v i ces v ce = 0.8 ? v ces t j = 25 c 24n60b 25 a 24n60bd1 200 a v ge = 0 v t j = 125 c 24n60b 1 ma 24n60bd1 2 ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 2.5 v (d1)
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 9 13 s pulse test, t 300 s, duty cycle 2 % c ies 1450 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 24n60b 130 pf 24n60bd1 160 pf c res 37 pf q g 41 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 18 nc q gc 18 nc t d(on) 50 ns t ri 50 ns t d(off) 150 250 ns t fi 170 300 ns e off 1.3 2.6 mj t d(on) 55 ns t ri 75 ns e on 1.2 mj t d(off) 190 ns t fi 280 ns e off 2.4 mj r thjc 0.83 k/w r thck 0.25 k/w inductive load, t j = 125 c i c = i c90 , v ge = 15 v, v ce = 0.8 v ces , r g = 33 ? to-247 ad outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc inductive load, t j = 25 c i c = i c90 , v ge = 15 v, l = 100 h v ce = 0.8 v ces , r g = 33 ? dim. m illimeter inches min. max. min. max. a 4.9 5.1 .193 .201 a 1 2.7 2.9 .106 .114 a 2 .02 .25 .001 .010 b 1.15 1.45 .045 .057 b 2 1.9 2.1 .75 .83 c .4 .65 .016 .026 d 13.80 14.00 .543 .551 e 15.85 16.05 .624 .632 e 1 13.3 13.6 .524 .535 e 5.45 bsc .215 bsc h 18.70 19.10 .736 .752 l 2.40 2.70 .094 .106 l1 1.20 1.40 .047 .055 l2 1.00 1.15 .039 .045 l3 0.25 bsc .010 bsc l4 3.80 4.10 .150 .161 to-268 outline ixsh 24n60b ixsh 24n60bd1 ixst 24n60b ixst 24n60bd1 reverse diode (fred) characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = i c90 , v ge = 0 v, t j = 150 c 1.6 v pulse test, t 300 s, duty cycle d 2 % t j = 25 c 2.5 v i rm i f = i c90 , v ge = 0 v, -di f /dt = 100 a/ s6a t rr v r = 100 v t j = 100 c 100 ns i f = 1 a; -di/dt = 100 a/ s; v r = 30 v t j = 25 c25 ns r thjc 0.9 k/w
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